A Fluoro-ethoxysilane-Based Stiction-Free Release Process for Submicron Gap MEMS
B. Parvais, A. Pallandre, A.M. Jonas and J.-P. Raskin
Université catholique de Louvain, BE
Keywords: stiction, SAM, MEMS
Nowadays, stiction remains one of the biggest reliability problems in the fabrication of micro-electromechanical systems (MEMS), especially when a small gap is used. To avoid the adhesion, a Self-Assembled Monolayer (SAM) can be coated. Main research in that field focuses on aliphatic chloro-silanes. We developed a novel wet-release CMOS compatible process for the fabrication of surface-micromachined beam using a perfluorated SAM. Uniform 9 Å thick monolayers were observed. A static contact angle of 121° was measured. Furthermore, a complete 1 µm thick (gap 0.5 µm) polysilicon RF MEMS capacitor with aluminium interconnects realized with this process demonstrated the CMOS compatibility.
NSTI Nanotech 2003 Conference Technical Program Abstract