Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2003 NSTI Nanotechnology Conference & Trade Show
Nanotech 2003
BioNano 2003
Program
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
2003 Sub Sections
Proceedings
Organization
Press Room
Sponsors
Exhibitors
Venue
Organizations
NSTI Events
Subscribe
Site Map
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Atomic-control placement of individual P atoms in Si for the fabrication of a quantum computer qubit array

S. R. Schofield, N. J. Curson, M. Y. Simmons, L. Oberbeck, T. Hallam, F. J. Ruess, and R. G. Clark
Centre for Quantum Computer Technology, AU

Keywords: Quantum computer, fabrication, silicon, lithography, STM, single atom

Abstract:
The ability to control the location of individual dopant atoms within a semiconductor has enormous potential for the creation of atomic-scale electronic devices. One of the most ambitious proposals for such a device is the solid-state quantum computer proposed by Kane, which requires the fabrication of a regularly-spaced array of individual P atoms as qubits, ~20 nm apart in a Si substrate. Here, we demonstrate the incorporation of individual P atoms into the surface of a Si substrate at controlled spatial locations, predefined with atomic-precision using a scanning tunneling microscope. A hydrogen monolayer was used as a lithographic resist, which was patterned by desorbing H from the surface with the STM tip. Phosphine precursor molecules were then adsorbed to the exposed areas of bare Si surface. The P atoms from these adsorbed molecules were then incorporated into the Si surface by performing a critical anneal to ~350 °C. Using this technique we demonstrate the creation of both continuous nanometer-wide lines of incorporated P atoms, and single P atom incorporation with a positional accuracy of order 1 nm. These results represent the first demonstration of controlled single dopant atom incorporation in Si at the atomic-scale.

NSTI Nanotech 2003 Conference Technical Program Abstract

 
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact