Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs

S.B Chiah , X. Zhou , and K.Y. Lim
S. B. CHIAH, SG

Keywords: short-/narrow-channel effects

Abstract:
The motivation of this work is to develop a unified geometry-dependent drain current (Ids) model for the entire range of drawn length (L) and drawn width (W) without binning, considering all important short-/narrow-channel effects including perpendicular-field mobility degradation, velocity saturation, source/drain series resistance, as well as channel-length modulation for all regions of operation. This has been achieved based on the ideas of the previous length-dependent Ids(L) model [1], which allows the unified Ids model to be extended to both length and width dimensions at various bias conditions

NSTI Nanotech 2003 Conference Technical Program Abstract