Low K carbon films deposited in low frequency discharge foe sub-micron devices

A.Kosarev, A.Torres, C.Zuniga
Institut National for Astrophysics, Optics and Electronics, MX

Keywords: materials, semiconductors

Abstract:
An interconnect delay begins to dominate total device delay time and consequently, operation rate at sub-micron (<200 nm) device size [1], stimulating a transition to low dielectric constant (K) nanoscale devices. The goal of this work is to study a correlation between deposition conditions, microstructure and dielectric constant and other electric characteristics of the carbon films deposited by LF PE CVD.The main accomplishments are as follows: films were fabricated at relativity high temperature T=350 C; the correlation between C-Hx, C=C bonding and r, K and Eb has been found, as shown in Fig.1; the current-voltage characteristics demonstrated the ohmic and space charge limited current behavior in low electric field, and the current controlled by the electron emission from one of the electrode (see Fig.2) in high electric field; the best parameters obtained in the samples with optimal content of C=C and C-H bonds are: r = 1014 Ohms cm, K = 2.1 and Eb =106 V/cm.

NSTI Nanotech 2003 Conference Technical Program Abstract