Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2003 NSTI Nanotechnology Conference & Trade Show
Nanotech 2003
BioNano 2003
Program
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
2003 Sub Sections
Proceedings
Organization
Press Room
Sponsors
Exhibitors
Venue
Organizations
NSTI Events
Subscribe
Site Map
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Application of Genetic Algorithm to Compact Model Parameter Extraction

X. Cai, H. Wang, X. Gu and G. Gildenblat
Electrical Engineering Department, Penn State University, US

Keywords: Genetic Algorithm, parameter extraction, compact model

Abstract:
The total number of model parameters in compact MOSFET models is usually between 50 and 300, necessitating an elaborate extraction process. Gradient-based optimization techniques were found to be useful but somewhat limited in their scope. The main difficulty is that the error profile has numerous local minima which can trap the convergence process. Similarly, the error surface is not always conducive to successful application of classical methods. In this work, the feasibility of using Genetic Algorithm (GA) to alleviate these problems is investigated. To achieve unambiguous results we concentrate primarily on the effective mobility model development and parameter extraction. Consequently this investigation is restricted to wide long-channel MOSFETS described by combining a new form of a charge-sheet model with an elaborate effective mobility model.

NSTI Nanotech 2003 Conference Technical Program Abstract

 
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact