A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

B.Schmithusen, K.Gartner, and W.Fichtner
Integrated Systems Laboratory, ETHZ, CH

Keywords: device simulation, grid adaptation, dissipation rate, error estimation, anisotropic refinement, homotopy technique

Abstract:
A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for the Scharfetter- Gummel box method discretization on quad-tree based boundary Delaunay grids. In analogy to standard a posteriori error estimation techniques new error indicators are proposed and a novel iterative recomputation procedure is developed for robust adaptive simulations.

NSTI Nanotech 2003 Conference Technical Program Abstract