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Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs

A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani and K. Horio
Shibaura Institute of Technology, Faculty of Systems Engineering, JP

Keywords: GaAs MESFET, kink, surface state, impact ionization

Abstract:
Effects of surface states on the kink phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to impact ionization of holes and the following hole trapping by the surface states. It is discussed how the surface-related kink phenomena could be weakened, by analyzing a recessed-gate structure and a structure with n^{+} source region, which are both expected to have less surface-state effects at the source side.

NSTI Nanotech 2003 Conference Technical Program Abstract

 
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