An energy transport gate current model accounting for a non-Maxwellian energy distribution
A. Gehring, T. Grasser, H. Kosina, and S. Selberherr
Institute for Microelectronics, AT
We report on a new formulation for the description of hot electron tunneling
through dielectrics. It is based on an expression which accounts for the
non-Maxwellian shape of the electron energy distribution function (EED) and
exactly reproduces its first three even moments n, Tn, and beta. Here we present a simplified model applicable within the
framework of the energy-transport model which only provides n and Tn.
Simulation results of long channel EEPROM devices and short channel MOSFETs are presented which show excellent agreement with Monte Carlo results and measurements.
NSTI Nanotech 2003 Conference Technical Program Abstract