Direct Source to Drain Tunnelling and its Impact on the Intrinsic Paramter Fluctuations in nanometre scale Double Gate MOSFETs

J.R. Watling, A. Asenov, A.R. Brown, A. Svizhenko and M.P. Anantram
University of Glasgow, UK

Keywords: Double Gate MOSFET, fluctuations, Source-to-Drain Tunnelling, Density Gradient

Abstract:
We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain and trapped charge in the undoped channel of sub 10nm double-gate MOSEFTs as require by the Silicon roadmap.

NSTI Nanotech 2003 Conference Technical Program Abstract