Monte Carlo and Energy Balance Simulations of 100 nm Conventional and Asymmetric MOSFET Device Structures
A. Mannargudi and D. Vasileska
Graduate Student, US
Keywords: nano-devices, asymmetric doping profiles, energy balance model
We have simulated a 100 nm assymetric MOSFET device structure using both the Silvaco ATLAS energy balance model and the in-house 2D Monte Carlo particle-based simulator. Our investigations show that the energy balance simulation results for the drain current are strongly affected by the choice of the energy relaxation time. Another noteworthy result is that the energy balance model tends to underestimate both the velocity overshoot effect and the average electron energy. the conclusion of this work is that the Monte Carlo method is more reliable tool for predicting device parameters, as it does not rely on any choice of fitting parameters.
NSTI Nanotech 2003 Conference Technical Program Abstract