Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2003 NSTI Nanotechnology Conference & Trade Show
Nanotech 2003
BioNano 2003
Program
Sunday
Monday
Tuesday
Wednesday
Thursday
Index of Authors
2003 Sub Sections
Proceedings
Organization
Press Room
Sponsors
Exhibitors
Venue
Organizations
NSTI Events
Subscribe
Site Map
 
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Transition of the ground state in a coupled N-layer quantum dot

W. Xie
Guangzhou University, CN

Keywords: quantum dot

Abstract:
There has been growing interest in the physics of quantum dots (QDs) in recent years because of the rapid development of fabrication technology. Most theoretical and experimental studies have been so far focused on the electronic structure of a single disc-like QD. Recently, a coupled QD that could be considered as an artificial molecule has attracted much attention. In contrast to the single disc-like QD, one must consider another degree of freedom along the growth direction for a vertically coupled QD. The main feature in this system is the effects of dot-dot and electron-electron interactions on the electronic structure. However, most of previous work has focused on double-layer QD systems, and only few works related to the multiple QD systems. We propose in this paper a procedure of exact diagonalization to study N-layer QDs. The low-lying energy levels as well as the ground state electronic structure are calculated systematically as a function of magnetic fields of arbitrary strength.

NSTI Nanotech 2003 Conference Technical Program Abstract

 
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact