Accurate modeling for RF Silicon MOSFET up to 15 GHz and the parameter extraction methodology
J. Lin, Y. Kiat Seng, M. Jian Guo and D. Manh Anh
Nanyang Technological University, SG
Keywords: MOSFET, parameter extraction, small-signal model, subcircuit, RF, S-parameters, Y-parameters, Z-parameters, measure and simulation
The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are shown. The procedure of the parameter extraction for RF MOSFET model is discussed and verified by experiment. The excellent correspondence is achieved between the modeled and measured S-parameters up to 15GHz for 0.18um CMOS process technology.
NSTI Nanotech 2003 Conference Technical Program Abstract