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Nano Science and Technology Institute 2002 NSTI Nanotechnology Conference & Trade Show
Nanotech 2002
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Nanotech 2002 Technical Program - Thursday April 25

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8:30 Keynote Grand Ballroom I - III
 Session chair: Andreas Wild, Motorola, Germany
8:30 What to do with Statistical Mechanics when the Figure of Merit Cannot be Calculated: Library Design for High-Throughput Materials Development (invited)
M.W. Deem, University of California-Los Angeles, USA
 
9:20 Break Grand Ballroom IV
 
9:30 Semiconductor Device Modeling Grand Ballroom II
 Session chair: C. Sudhama, ON Semiconductor, USA
9:30 The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision
M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu and M.D. Giles, TU Vienna, Austria
9:50 DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
B. Neinhus, C. Jungemann and B. Meinerzhagen, Universitat Bremen, Germany
10:10 2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model
A. Schenk and A. Wettstein, Swiss Fed. Inst. of Technology, Switzerland
10:30 The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices
D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry, Arizona State University, USA
10:50 Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling
A. Gehring, T. Grasser and S. Selberherr, TU Vienna, Austria
11:10 Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors
S. Wigger, M. Saraniti, S. Goodnick and A Leitenstorfer, Arizona State University, USA
11:30 Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination
H.P. Felsl and G. Wachutka, Munich University of Technology, Germany
11:50 An Impact Ionization Model Including an Explicit Cold Carrier Population
T. Grasser, H. Kosina, C. Heitzinger and S. Selberherr, TU Vienna, Austria
12:10 The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs
W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding, University of Illinois, USA
 
9:30 Workshop on Compact Modeling - 8 Grand Ballroom I
 Session chair: Al Kordesch, Silterra Malaysia
9:30 Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application (invited)
S. Fung, P. Su and C. Hu, IBM Microelectronics, USA
10:00 A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling
L. Larcher and P. Pavan, Universitŕ di Modena e Reggio Emilia, Italy
10:20 Compact Model for Manufacturing Design and Fluctuation Study
K.Y. Lim and X. Zhou, Chartered Semiconductor Manufacturing Ltd., Singapore
10:40 Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction
S.B. Chiah, X. Zhou, K.Y. Lim, A. See and L. Chan, Nanyang Technological University, Singapore
 
11:00 Compact Modeling Tutorials Grand Ballroom I
11:00 Model Equations of the Self-Consistent Surface-Potential MOS-Model HiSIM
M. Miura-Mattausch, Hiroshima University, Japan
 
9:30 Mechanical Properties at the Nanoscale -1 San Jeronimo
 Session chair: Murray Daw, Clemson University, USA
9:30 Mechanical Transformations, Strength, Pyroelectricity, and Electron Transport in Nanotubes (invited)
J. Bernholc, North Carolina State University, USA
10:20 Computing the Structure of Dislocation Cores in Semiconductors: The Influence of Stress (invited)
D. Chrzan, U.C. Berkeley, USA
11:10 Phase Field Modeling of Dislocation Network Coarsening, Dislocation - Impurity, and Dislocation - Precipitate Interactions (invited)
C. Shen, A. Kazaryan, P.M. Anderson and Y. Wang, Ohio State University, USA
 
9:30 Modeling of Biological Conduction Processes San Cristobal
 Session chair: Narayan Aluru, University of Illinois at Urbana-Champaign, USA
9:30 Towards a Reliable Model of Ion Channels: Three-dimensional simulation of ionic solutions
M. Saraniti, S. Wigger, Z. Schuss and R. Eisenberg, Illinois Institute of Technology, USA
9:50 Structure and Environment Influence in DNA Conduction
Ch. Adessi, S. Walch and M.P. Anantram, NASA Ames Research Center, USA
10:10 Combining Computational Chemistry and Computational Electronics to Understand Protein Ion Channels
T. van der Straaten, S. Varma, S-W Chiu, J. Tang, N.R. Aluru, R. Eisenberg, U. Ravaioli and E. Jakobsson, University of Illinois, USA
10:30 Structure-function study of Porins
D.P. Chen, J. Tang and R. Eisenberg, Rush Medical College, USA
 
12:00 Lunch On own
 
13:30 Compact Modeling Tutorials Grand Ballroom I
13:30 Submicron Circuit Design with BSIM3/4
M. Chan, Hong Kong University of Science and Technology, Hong Kong
14:30 MOS Transistor Modeling for RF IC Design
C. Enz, Swiss Center for Electronics and Microtechnology, Switzerland
 
14:00 Process Modeling Grand Ballroom II
 Session chair: Blas Pedro Uberuaga, University of Washington, USA
14:00 Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials
N. Pirch, O. Baldus, R. Waser and E.W. Kreutz, RWTH Aachen, Germany
14:20 The Level-Set Method for Modeling Epitaxial Growth
C. Ratsch, M. Petersen and R.E. Caflisch, University of California-Los Angeles, USA
14:40 Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method
D. Wheeler, D. Josell and T.P. Moffat, NIST, USA
15:00 A Physically-Based Model for Oxidation in a Circular Trench in Silicon
Y. Xu, C. Sudhama, S. Hong, J.A. Sellers, S. Ambadi, K. Kamekona, G. Averett, B. Ruiz, I. Wan, W. Cai, Y. Wu, J.C. Costa and R.B. Davies, ON Semiconductor, USA
15:20 Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation - Application to via Filling
Y. Hiwatari, Y. Kaneko, K. Ohara and T. Murakami, Kanazawa University, Japan
 
14:00 System Level Modeling of MEMS Grand Ballroom III
 Session chair: Matthew Varghese, Draper Labs, USA
14:00 Modeling, Simulation and Design of Piezoelectric Micro-Hydraulic Transducer Devices
O. Yaglioglu, Y.H. Su, D.C. Roberts, J. Carretero and N.W. Hagood, Massachusetts Institute of Technology, USA
14:20 Physically-Based Damping Model for Highly Perforated and Largely Deflected Torsional Actuators
R. Sattler, G. Schrag and G. Wachutka, Munich University of Technology, Germany
14:40 Improving Trajectory Piecewise-Linear Approach to Nonlinear Model Order Reduction for Micromachined Devices Using an Aggregated Projection Basis
M. Rewienski and J.K. White, Massachusetts Institute of Technology, USA
15:00 Integrated Modeling of Optical MEMS Subsystems
R. Stoll, T. Plowman, D. Winick and A. Morris, Coventor, USA
15:20 Large-Deflection Beam Model for Schematic-Based Behavioral Simulation in NODAS
Q. Jing, T. Mukherjee and G.K. Fedder, Carnegie Mellon University, USA
15:40 Behavioral Modeling of a Humidity Sensor Using an Analog Hardware Description Language
A. Tételin, H. Lévi, B. Mongellaz and C. Pellet, Laboratoire IXL, France
 
14:00 Mechanical Properties at the Nanoscale - 2 San Jeronimo
 Session chair: Murray Daw, Clemson University, USA
14:00 Nanomanipulation and Characterization of Individual Carbon Nanotubes (invited)
R. Ruoff, Northwestern University, USA
14:40 Intimate Relationship Between Structural Deformation and Properties of Single-Walled Carbon Nanotubes
T. Yildirim, O. Gulseren and S. Ciraci, NIST, USA
15:00 Size Effects and Scaling in Misfit Dislocation Formation in Self Assembled Quantum Dots
L.H. Friedman, D.M. Weygand and E. van der Giessen, University of Groningen, The Netherlands
15:20 Computer Simulation Study of Mechanical Properties of Nanoscale Materials by Molecular Dynamics and Lattice Green's Function Methods
K. Masuda-Jindo, M. Menon and V-V Hung, Tokyo Institute of Technology, Japan
15:40 Theoretical Strength and Onset of Yielding in Nanoindentation
M. Sob, M. Friák and V. Vitek, Academy of Sciences of the Czech Republic, Czech Republic
16:00 Dislocation Processes and Deformation Twinning in Nanocrystalline Al
V. Yamakov, D. Wolf, S.R. Phillpot and H. Gleiter, Argonne National Lab, USA
16:20 Mechanical and Electronic Properties of Strained Layer Superlattices Studied by Density Functional TB and Path Probability Methods
K. Masuda-Jindo and R. Kikuchi, Tokyo Institute of Technology, Japan
 
14:00 Novel Nanoscale Modeling Approaches for Condensed-Matter Phenomena San Cristobal
 Session chair: Wolfgang Windl, Ohio State University, USA
14:00 Three Dimensional Adhesion Model for Arbitrary Rough Surfaces
S. Deladi, G. Krijnen, N.R. Tas and M. Elwenspoek, University of Twente, The Netherlands
14:20 An Effective Model for Microscopic Intrinsic Localized Modes
G. Kalosakas and A.R. Bishop, Los Alamos National Laboratory, USA
14:40 The Electroreduction of Hydrogen on Pt(111)
N. Marzari, L. Blum and R. Car, University of Puerto Rico, USA
15:00 Suspensions of Charged Nano-Particles: A Molecular-Dynamics Study
J.H. Werth, S.M. Dammer, Z. Farkas, H. Hinrichsen and D.E. Wolf, Gerhard-Mercator-University, Germany
15:20 Molecular-Dynamics Study of Physical Properties in Sintered Nano-Particles
K. Kadau, P.S. Lomdahl, P. Entel, D. Kadau, M. Kreth, T.C. Germann, B.L. Holian, F. Westerhoff and D.E. Wolf, Los Alamos National Laboratory, USA
 
15:30 Break Condado Foyer
 
16:00 Compact Modeling Tutorials Grand Ballroom I
16:00 MOS Modeling, Design Quality, and Modern Analog Design
D. Foty, Gilgamesh Associates, USA
17:00 An Introduction to MOS Model 11
D.B.M. Klaassen, Philips Research Laboratories, The Netherlands
18:15 Compact Modeling Closing - 18:30
X. Zhou, Nanyang Technological University, Singapore
 
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