| |
| 8:30 |
Keynote |
Grand Ballroom I - III |
| Session chair: Andreas Wild, Motorola, Germany |
| 8:30 |
What to do with Statistical Mechanics when the Figure of Merit Cannot be Calculated: Library Design for High-Throughput Materials Development (invited)
M.W. Deem, University of California-Los Angeles, USA |
| |
| 9:20 |
Break |
Grand Ballroom IV |
| |
| 9:30 |
Semiconductor Device Modeling |
Grand Ballroom II |
| Session chair: C. Sudhama, ON Semiconductor, USA |
| 9:30 |
The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision
M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu and M.D. Giles, TU Vienna, Austria |
| 9:50 |
DD and HD Models for Noise due to Impact Ionization in Si and SiGe Devices Verified by MC Simulations
B. Neinhus, C. Jungemann and B. Meinerzhagen, Universitat Bremen, Germany |
| 10:10 |
2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model
A. Schenk and A. Wettstein, Swiss Fed. Inst. of Technology, Switzerland |
| 10:30 |
The Role of the Quantization Effects on the Operation of 50 nm MOSFET and 250 nm FIBMOS Devices
D. Vasileska, I. Knezevic, R. Akis and D.K. Ferry, Arizona State University, USA |
| 10:50 |
Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling
A. Gehring, T. Grasser and S. Selberherr, TU Vienna, Austria |
| 11:10 |
Fullband Particle-Based Simulation of High-Field Transient Transport in III-V Semiconductors
S. Wigger, M. Saraniti, S. Goodnick and A Leitenstorfer, Arizona State University, USA |
| 11:30 |
Evaluation of the Breakdown Behavior of 4H-SiC Schottky Diodes with a p-Guardring Junction Termination
H.P. Felsl and G. Wachutka, Munich University of Technology, Germany |
| 11:50 |
An Impact Ionization Model Including an Explicit Cold Carrier Population
T. Grasser, H. Kosina, C. Heitzinger and S. Selberherr, TU Vienna, Austria |
| 12:10 |
The Effect of a Multiple Carrier Model of Interface Trap Generation on Lifetime Extraction for MOSFETs
W. McMahon, K. Matsuda, J. Lee, K. Hess and J. Lyding, University of Illinois, USA |
| |
| 9:30 |
Workshop on Compact Modeling - 8 |
Grand Ballroom I |
| Session chair: Al Kordesch, Silterra Malaysia |
| 9:30 |
Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application (invited)
S. Fung, P. Su and C. Hu, IBM Microelectronics, USA |
| 10:00 |
A New Analytical Model of Channel Hot Electron (CHE) and CHannel Initiated Secondary ELectron (CHISEL) Current Suitable for Compact Modeling
L. Larcher and P. Pavan, Universitŕ di Modena e Reggio Emilia, Italy |
| 10:20 |
Compact Model for Manufacturing Design and Fluctuation Study
K.Y. Lim and X. Zhou, Chartered Semiconductor Manufacturing Ltd., Singapore |
| 10:40 |
Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction
S.B. Chiah, X. Zhou, K.Y. Lim, A. See and L. Chan, Nanyang Technological University, Singapore |
| |
| 11:00 |
Compact Modeling Tutorials |
Grand Ballroom I |
| 11:00 |
Model Equations of the Self-Consistent Surface-Potential MOS-Model HiSIM
M. Miura-Mattausch, Hiroshima University, Japan |
| |
| 9:30 |
Mechanical Properties at the Nanoscale -1 |
San Jeronimo |
| Session chair: Murray Daw, Clemson University, USA |
| 9:30 |
Mechanical Transformations, Strength, Pyroelectricity, and Electron Transport in Nanotubes (invited)
J. Bernholc, North Carolina State University, USA |
| 10:20 |
Computing the Structure of Dislocation Cores in Semiconductors: The Influence of Stress (invited)
D. Chrzan, U.C. Berkeley, USA |
| 11:10 |
Phase Field Modeling of Dislocation Network Coarsening, Dislocation - Impurity, and Dislocation - Precipitate Interactions (invited)
C. Shen, A. Kazaryan, P.M. Anderson and Y. Wang, Ohio State University, USA |
| |
| 9:30 |
Modeling of Biological Conduction Processes |
San Cristobal |
| Session chair: Narayan Aluru, University of Illinois at Urbana-Champaign, USA |
| 9:30 |
Towards a Reliable Model of Ion Channels: Three-dimensional simulation of ionic solutions
M. Saraniti, S. Wigger, Z. Schuss and R. Eisenberg, Illinois Institute of Technology, USA |
| 9:50 |
Structure and Environment Influence in DNA Conduction
Ch. Adessi, S. Walch and M.P. Anantram, NASA Ames Research Center, USA |
| 10:10 |
Combining Computational Chemistry and Computational Electronics to Understand Protein Ion Channels
T. van der Straaten, S. Varma, S-W Chiu, J. Tang, N.R. Aluru, R. Eisenberg, U. Ravaioli and E. Jakobsson, University of Illinois, USA |
| 10:30 |
Structure-function study of Porins
D.P. Chen, J. Tang and R. Eisenberg, Rush Medical College, USA |
| |
| 12:00 |
Lunch |
On own |
| |
| 13:30 |
Compact Modeling Tutorials |
Grand Ballroom I |
| 13:30 |
Submicron Circuit Design with BSIM3/4
M. Chan, Hong Kong University of Science and Technology, Hong Kong |
| 14:30 |
MOS Transistor Modeling for RF IC Design
C. Enz, Swiss Center for Electronics and Microtechnology, Switzerland |
| |
| 14:00 |
Process Modeling |
Grand Ballroom II |
| Session chair: Blas Pedro Uberuaga, University of Washington, USA |
| 14:00 |
Numerical Investigations of Laser Induced Crystallization and Stress Development in Phase Change Electroceramic Materials
N. Pirch, O. Baldus, R. Waser and E.W. Kreutz, RWTH Aachen, Germany |
| 14:20 |
The Level-Set Method for Modeling Epitaxial Growth
C. Ratsch, M. Petersen and R.E. Caflisch, University of California-Los Angeles, USA |
| 14:40 |
Numerical Simulation of Superconformal Electrodeposition Using the Level Set Method
D. Wheeler, D. Josell and T.P. Moffat, NIST, USA |
| 15:00 |
A Physically-Based Model for Oxidation in a Circular Trench in Silicon
Y. Xu, C. Sudhama, S. Hong, J.A. Sellers, S. Ambadi, K. Kamekona, G. Averett, B. Ruiz, I. Wan, W. Cai, Y. Wu, J.C. Costa and R.B. Davies, ON Semiconductor, USA |
| 15:20 |
Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation - Application to via Filling
Y. Hiwatari, Y. Kaneko, K. Ohara and T. Murakami, Kanazawa University, Japan |
| |
| 14:00 |
System Level Modeling of MEMS |
Grand Ballroom III |
| Session chair: Matthew Varghese, Draper Labs, USA |
| 14:00 |
Modeling, Simulation and Design of Piezoelectric Micro-Hydraulic Transducer Devices
O. Yaglioglu, Y.H. Su, D.C. Roberts, J. Carretero and N.W. Hagood, Massachusetts Institute of Technology, USA |
| 14:20 |
Physically-Based Damping Model for Highly Perforated and Largely Deflected Torsional Actuators
R. Sattler, G. Schrag and G. Wachutka, Munich University of Technology, Germany |
| 14:40 |
Improving Trajectory Piecewise-Linear Approach to Nonlinear Model Order Reduction for Micromachined Devices Using an Aggregated Projection Basis
M. Rewienski and J.K. White, Massachusetts Institute of Technology, USA |
| 15:00 |
Integrated Modeling of Optical MEMS Subsystems
R. Stoll, T. Plowman, D. Winick and A. Morris, Coventor, USA |
| 15:20 |
Large-Deflection Beam Model for Schematic-Based Behavioral Simulation in NODAS
Q. Jing, T. Mukherjee and G.K. Fedder, Carnegie Mellon University, USA |
| 15:40 |
Behavioral Modeling of a Humidity Sensor Using an Analog Hardware Description Language
A. Tételin, H. Lévi, B. Mongellaz and C. Pellet, Laboratoire IXL, France |
| |
| 14:00 |
Mechanical Properties at the Nanoscale - 2 |
San Jeronimo |
| Session chair: Murray Daw, Clemson University, USA |
| 14:00 |
Nanomanipulation and Characterization of Individual Carbon Nanotubes (invited)
R. Ruoff, Northwestern University, USA |
| 14:40 |
Intimate Relationship Between Structural Deformation and Properties of Single-Walled Carbon Nanotubes
T. Yildirim, O. Gulseren and S. Ciraci, NIST, USA |
| 15:00 |
Size Effects and Scaling in Misfit Dislocation Formation in Self Assembled Quantum Dots
L.H. Friedman, D.M. Weygand and E. van der Giessen, University of Groningen, The Netherlands |
| 15:20 |
Computer Simulation Study of Mechanical Properties of Nanoscale Materials by Molecular Dynamics and Lattice Green's Function Methods
K. Masuda-Jindo, M. Menon and V-V Hung, Tokyo Institute of Technology, Japan |
| 15:40 |
Theoretical Strength and Onset of Yielding in Nanoindentation
M. Sob, M. Friák and V. Vitek, Academy of Sciences of the Czech Republic, Czech Republic |
| 16:00 |
Dislocation Processes and Deformation Twinning in Nanocrystalline Al
V. Yamakov, D. Wolf, S.R. Phillpot and H. Gleiter, Argonne National Lab, USA |
| 16:20 |
Mechanical and Electronic Properties of Strained Layer Superlattices Studied by Density Functional TB and Path Probability Methods
K. Masuda-Jindo and R. Kikuchi, Tokyo Institute of Technology, Japan |
| |
| 14:00 |
Novel Nanoscale Modeling Approaches for Condensed-Matter Phenomena |
San Cristobal |
| Session chair: Wolfgang Windl, Ohio State University, USA |
| 14:00 |
Three Dimensional Adhesion Model for Arbitrary Rough Surfaces
S. Deladi, G. Krijnen, N.R. Tas and M. Elwenspoek, University of Twente, The Netherlands |
| 14:20 |
An Effective Model for Microscopic Intrinsic Localized Modes
G. Kalosakas and A.R. Bishop, Los Alamos National Laboratory, USA |
| 14:40 |
The Electroreduction of Hydrogen on Pt(111)
N. Marzari, L. Blum and R. Car, University of Puerto Rico, USA |
| 15:00 |
Suspensions of Charged Nano-Particles: A Molecular-Dynamics Study
J.H. Werth, S.M. Dammer, Z. Farkas, H. Hinrichsen and D.E. Wolf, Gerhard-Mercator-University, Germany |
| 15:20 |
Molecular-Dynamics Study of Physical Properties in Sintered Nano-Particles
K. Kadau, P.S. Lomdahl, P. Entel, D. Kadau, M. Kreth, T.C. Germann, B.L. Holian, F. Westerhoff and D.E. Wolf, Los Alamos National Laboratory, USA |
| |
| 15:30 |
Break |
Condado Foyer |
| |
| 16:00 |
Compact Modeling Tutorials |
Grand Ballroom I |
| 16:00 |
MOS Modeling, Design Quality, and Modern Analog Design
D. Foty, Gilgamesh Associates, USA |
| 17:00 |
An Introduction to MOS Model 11
D.B.M. Klaassen, Philips Research Laboratories, The Netherlands |
| 18:15 |
Compact Modeling Closing - 18:30
X. Zhou, Nanyang Technological University, Singapore |
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