Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2002 NSTI Nanotechnology Conference & Trade Show
Nanotech 2002
Program
2002 Sub Sections
Nanotechnology
Microtechnology
ICCN 2002
MSM 2002
WCM 2002
Proceedings
Organization
Sponsors
Exhibitors
Venue
NSTI Events
Subscribe
 
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

MOS Transistor Modeling for RF Integrated Circuit Design

Workshop on Compact Modeling Tutorial

Prof. Christian Enz
CSEM SA

Abstract

The design of radio-frequency (RF) integrated circuits in deep-submicron CMOS processes requires accurate and scalable compact models of the MOS transistor that are valid in the GHz frequency range and beyond. Unfortunately, the currently available compact models give inaccurate results if they are not modified adequately. This lecture presents the basis of the modeling of the MOS transistor for circuit simulation at RF. A physical and scalable equivalent circuit that can easily be implemented as a Spice subcircuit is described. The small-signal, noise and large-signal operations are discussed and measurements made on a 0.25 um CMOS process are presented that validate the RF MOS model up to 10 GHz.

Table of Contents

  1. CMOS technology evolution: evolution of CMOS processes, process scaling, low-voltage constraint and its impact to RF CMOS circuit design.
  2. Small-signal modeling: long-channel intrinsic small-signal parameters and their bias dependence, transcapacitances and non-quasistatic (NQS) effects, short-channel effects on small-signal parameters, extrinsic components (junction capacitances, series resistances, overlap capacitances), intra-device substrate coupling, y-parameters, ft and fmax, non-quasistatic versus quasistatic.
  3. Noise modeling: thermal noise model, noise in short-channel devices, noise at HF, induced gate noise, HF noise parameters and their dependence on device geometry.
  4. Large-signal modeling: evaluation of large-signal models at RF.
 
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact