
	2000 NSTI Nanotechnology Conference & Trade Show

Nanotech 2000 Technical Program - Monday March 27

8:00	Registration

8:15	Welcome and introductory remarks, Andreas Wild, Motorola Grand Ballroom


8:30	Keynote lectures Grand Ballroom Session chair: Andreas Wild, Motorola

8:30	Automatic Device Design Optimization with TCAD Frameworks S. Selberherr Technical University of Vienna, AUSTRIA
9:15	Top Down Design of MEMS G.K. Fedder Carnegie Mellon University, USA,

10:00	Coffee Grand Ballroom Foyer


10:20	Process Modeling: Layout, Lithography Grand Ballroom I Session chair: Jean-Michel Karam, MemsCap, France

10:20	Automated Mask-Layout and Process Synthesis for MEMS L. Ma and E.K. Antonsson California Institute of Technology, USA
10:40	Creation of 3D Surface Models from 2D Layouts for BEM Anaylysis M. Spasojevic, P. Ljung and M. Bächtold Coyote Systems, Inc., USA
11:00	Process Simulation for Contact Print Microlithography A.A. Darhuber, S.M. Miller, S.M. Troian and S. Wagner Princeton University, USA
11:20	Full-chip Process Simulation for Silicon DRC E. Sahouria, Y. Granik, N. Cobb and O. Toublan Mentor Graphics, Corp., USA
11:40	Systematic Design and Optimization of Multi-Material, Multi-Degree-of-Freedom Micro Actuators O. Sigmund Technical University of Denmark, DENMARK

10:20	Computational Methods for Microfluidics Grand Ballroom II Session chair: Narayan R. Aluru, University of Illinois at Urbana-Champaign

10:20	A Fast Stokes Solver for Generalized Flow Problems W. Ye, X. Wang and J. White Massachusetts Institute of Technology, USA
10:40	Analysis of Sample Injection and Band-Broadening in Capillary Electrophoresis Microchips S. Krishnamoorthy and M.G. Giridharan CFD Research Corp., USA
11:00	Electroosmotic Flow in a Tube or Channel for Non-Negligible Zeta Potentials S.K. Griffiths and R.H. Nilson Sandia National Laboratories, USA
11:20	Modeling of Microfluidic Devices Using Scalable Algorithms L. Stals Old Dominion University, USA
11:40	A Neural Network Based Macromodel for Microflow Sensors O. Mikulchenko, A. Rasmussen and K. Mayaram Washington State University, USA

12:00	Lunch


13:20	Process Modeling: Implant, Diffusion Grand Ballroom I Session chair: Wolfgang Windl, Motorola

13:20	Robust Ion-Implantation Process Design through Statistical Analysis C. Sudhama, R. Thoma, M. Morris, J. Christiansen and I-S. Lim Motorola Digital DNA Labs, USA
13:40	Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method Y. Ban, S. Yoon, O. Kwon and T. Won Inha University, KOREA
14:00	Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles L. Ciampolini, M. Ciappa, P. Malberti and W. Fichtner Swiss Federal Institute of Technology, SWITZERLAND
14:20	Systematic Global Calibration of a Process Simulator J-H. Lee, K-D. Kim, J-T. Kong, S-W. Lee, Y-W. Kim and D-H. Baek Samsung Electronics Co.Ltd., KOREA

13:20	Computational Materials Grand Ballroom II Session chair: Robert Rudd

13:20	Ab initio Molecular Dynamics Simulations of Aluminum Ion Solvation in Water Clusters M.I. Lubin, E.J. Bylaska and J.H. Weare University of California, USA
13:40	Simulation of Porous Si and SiOx Layer Growth V.M. Burlakov, A.P. Sutton, G.A.D. Briggs and Y. Tsukahara University of Oxford, UNITED KINGDOM
14:00	Simulation Of Point Defect Clustering In Cz-Silicon Wafers On The Cray T3E Scalable Parallel Computer: Application To Oxygen Precipitation F.S. Karouri, A. Karoui and G.A. Rozgonyi North Carolina State University, USA
14:20	Heterogeneous Thin Films of Martensitic Materials with Application to Large Strain Microactuators Y.C. Shu National Taiwan University, Taiwan, ROC

14:40	Coffee Grand Ballroom Foyer


15:00	Process Modeling: Oxidation, Etch, Metal Grand Ballroom I Session chair: Sung-Kie Youn

15:00	Modeling of the Self-Limiting Oxidation for Nanofabrication of Si Y. Chen University of California, USA
15:20	On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations T. Hoffmann, K.F. Dombrowski and V. Senez IEMN-ISEN, UMR CNRS, FRANCE
15:40	Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring A. Horn, H. Schröder, E. Obermeier and G. Wachutka Munich University of Technology, GERMANY
16:00	Strength of Nanoscale Copper Connection Under Shear P. Heino Tampere University of Technology, FINLAND
16:20	Modeling the Microstructure and Elastic Properties of Complex Materials A.P. Roberts and E.J. Garboczi University of Queensland, AUSTRALIA
16:40	Pre-Physical Design Analysis and Optimization of Repeaters Based on Technology Node, Materials, Devices, and Repeater Options W.T. Lynch , USA

15:00	Semiconductor Device Modeling Grand Ballroom II Session chair: Andreas Wild, Motorola

15:00	Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions J. Furlan and Z. Gorup University of Ljubljana, SLOVENIA
15:20	Optimization of FIBMOSs through 2-D Device Simulations J. Kang, D.K. Schroder and D.P. Pivin Arizona State University, USA
15:40	Modelling of the ""Gated-Diode"" Configuration in Bulk MOSFET’s A. Yip, Y.T. Yeow, G.S. Samudra and C.H. Ling TECH Semiconductor, SINGAPORE
16:00	Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen University of Bremen, GERMANY
16:20	Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement C.Y.T. Chiang, Y.T. Yeow and R. Ghodsi University of Queensland, AUSTRALIA