Nano Science and Technology InstituteNano Science and Technology Institute
Nano Science and Technology Institute 2000 NSTI Nanotechnology Conference & Trade Show
Nanotech 2000
Program
Monday
Tuesday
Wednesday
Index of Authors
2000 Sub Sections
Proceedings
Organization
Sponsors
Exhibitors
Venue
NSTI Events
Subscribe
 
Nanotech Proceedings
Nanotechnology Proceedings
Supporting Organizations
Supporting Organizations
Event Contact
696 San Ramon Valley Blvd., Ste. 423
Danville, CA 94526
Ph: (925) 353-5004
Fx: (925) 886-8461
E-mail:
 
 

Nanotech 2000 Technical Program - Monday March 27

Home Monday Tuesday Wednesday Authors
8:00Registration
 
8:15

Welcome and introductory remarks, Andreas Wild, Motorola

Grand Ballroom
 
 
8:30

Keynote lectures

Grand Ballroom
Session chair: Andreas Wild, Motorola
 
8:30 Automatic Device Design Optimization with TCAD Frameworks
S. Selberherr
Technical University of Vienna, AUSTRIA
9:15 Top Down Design of MEMS
G.K. Fedder
Carnegie Mellon University, USA,
 
10:00

Coffee

Grand Ballroom Foyer
 
 
10:20

Process Modeling: Layout, Lithography

Grand Ballroom I
Session chair: Jean-Michel Karam, MemsCap, France
 
10:20 Automated Mask-Layout and Process Synthesis for MEMS
L. Ma and E.K. Antonsson
California Institute of Technology, USA
10:40 Creation of 3D Surface Models from 2D Layouts for BEM Anaylysis
M. Spasojevic, P. Ljung and M. Bächtold
Coyote Systems, Inc., USA
11:00 Process Simulation for Contact Print Microlithography
A.A. Darhuber, S.M. Miller, S.M. Troian and S. Wagner
Princeton University, USA
11:20 Full-chip Process Simulation for Silicon DRC
E. Sahouria, Y. Granik, N. Cobb and O. Toublan
Mentor Graphics, Corp., USA
11:40 Systematic Design and Optimization of Multi-Material, Multi-Degree-of-Freedom Micro Actuators
O. Sigmund
Technical University of Denmark, DENMARK
 
10:20

Computational Methods for Microfluidics

Grand Ballroom II
Session chair: Narayan R. Aluru, University of Illinois at Urbana-Champaign
 
10:20 A Fast Stokes Solver for Generalized Flow Problems
W. Ye, X. Wang and J. White
Massachusetts Institute of Technology, USA
10:40 Analysis of Sample Injection and Band-Broadening in Capillary Electrophoresis Microchips
S. Krishnamoorthy and M.G. Giridharan
CFD Research Corp., USA
11:00 Electroosmotic Flow in a Tube or Channel for Non-Negligible Zeta Potentials
S.K. Griffiths and R.H. Nilson
Sandia National Laboratories, USA
11:20 Modeling of Microfluidic Devices Using Scalable Algorithms
L. Stals
Old Dominion University, USA
11:40 A Neural Network Based Macromodel for Microflow Sensors
O. Mikulchenko, A. Rasmussen and K. Mayaram
Washington State University, USA
 
12:00

Lunch


 
 
13:20

Process Modeling: Implant, Diffusion

Grand Ballroom I
Session chair: Wolfgang Windl, Motorola
 
13:20 Robust Ion-Implantation Process Design through Statistical Analysis
C. Sudhama, R. Thoma, M. Morris, J. Christiansen and I-S. Lim
Motorola Digital DNA Labs, USA
13:40 Modeling of Ultra-low Energy Ion Implantation by Monte-Carlo Method
Y. Ban, S. Yoon, O. Kwon and T. Won
Inha University, KOREA
14:00 Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles
L. Ciampolini, M. Ciappa, P. Malberti and W. Fichtner
Swiss Federal Institute of Technology, SWITZERLAND
14:20 Systematic Global Calibration of a Process Simulator
J-H. Lee, K-D. Kim, J-T. Kong, S-W. Lee, Y-W. Kim and D-H. Baek
Samsung Electronics Co.Ltd., KOREA
 
13:20

Computational Materials

Grand Ballroom II
Session chair: Robert Rudd
 
13:20 Ab initio Molecular Dynamics Simulations of Aluminum Ion Solvation in Water Clusters
M.I. Lubin, E.J. Bylaska and J.H. Weare
University of California, USA
13:40 Simulation of Porous Si and SiOx Layer Growth
V.M. Burlakov, A.P. Sutton, G.A.D. Briggs and Y. Tsukahara
University of Oxford, UNITED KINGDOM
14:00 Simulation Of Point Defect Clustering In Cz-Silicon Wafers On The Cray T3E Scalable Parallel Computer: Application To Oxygen Precipitation
F.S. Karouri, A. Karoui and G.A. Rozgonyi
North Carolina State University, USA
14:20 Heterogeneous Thin Films of Martensitic Materials with Application to Large Strain Microactuators
Y.C. Shu
National Taiwan University, Taiwan, ROC
 
14:40

Coffee

Grand Ballroom Foyer
 
 
15:00

Process Modeling: Oxidation, Etch, Metal

Grand Ballroom I
Session chair: Sung-Kie Youn
 
15:00 Modeling of the Self-Limiting Oxidation for Nanofabrication of Si
Y. Chen
University of California, USA
15:20 On 2D/3D Numerical Oxidation Modeling: Calibration and Investigation of Silicon Crystal Orientation Effect on Stresses in Shallow Trench Isolations
T. Hoffmann, K.F. Dombrowski and V. Senez
IEMN-ISEN, UMR CNRS, FRANCE
15:40 Simulation of Orientation-Dependent Etching of Silicon Using a New Step Flow Model of 3D Structuring
A. Horn, H. Schröder, E. Obermeier and G. Wachutka
Munich University of Technology, GERMANY
16:00 Strength of Nanoscale Copper Connection Under Shear
P. Heino
Tampere University of Technology, FINLAND
16:20 Modeling the Microstructure and Elastic Properties of Complex Materials
A.P. Roberts and E.J. Garboczi
University of Queensland, AUSTRALIA
16:40 Pre-Physical Design Analysis and Optimization of Repeaters Based on Technology Node, Materials, Devices, and Repeater Options
W.T. Lynch
, USA
 
15:00

Semiconductor Device Modeling

Grand Ballroom II
Session chair: Andreas Wild, Motorola
 
15:00 Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions
J. Furlan and Z. Gorup
University of Ljubljana, SLOVENIA
15:20 Optimization of FIBMOSs through 2-D Device Simulations
J. Kang, D.K. Schroder and D.P. Pivin
Arizona State University, USA
15:40 Modelling of the ""Gated-Diode"" Configuration in Bulk MOSFET’s
A. Yip, Y.T. Yeow, G.S. Samudra and C.H. Ling
TECH Semiconductor, SINGAPORE
16:00 Investigation of High Frequency Noise in a SiGe HBT Based on Shockley's Impedance Field Method and the Hydrodynamic Model
S. Decker, B. Neinhus, B. Heinemann, C. Jungemann and B. Meinerzhagen
University of Bremen, GERMANY
16:20 Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement
C.Y.T. Chiang, Y.T. Yeow and R. Ghodsi
University of Queensland, AUSTRALIA
Home Monday Tuesday Wednesday Authors

Back

 
Featured Sponsors
Nanotech Sponsors
News Headlines
NSTI Online Community
 
 

© Nano Science and Technology Institute, all rights reserved.
Terms of use | Privacy policy | Contact